Influence of nanowires length on performance of crystalline silicon solar cell

Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

  Li, Haofeng ^a   Jia, Rui ^a   Chen, Chen ^a   Xing, Zhao ^a   Ding, Wuchang ^a   Meng, Yanlong ^a   Wu, Deqi ^a   Liu, Xinyu ^a   Ye, Tianchun ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION; CONTACT PROPERTIES; CRYSTALLINE SILICON SOLAR CELLS; ELECTROLESS; ETCHING METHOD; SILICON NANOWIRES; SOLAR CELL PERFORMANCE; SPECTRAL BANDWIDTH; SURFACE PASSIVATION; WIRE LENGTH;

NANOWIRES; OPTICAL PROPERTIES; PASSIVATION;

SOLAR CELLS;

EID: 79954620327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3574904     Document Type: Article

References (16)

1. M. A. Green, J. H. Zhao, A. H. Wang, and S. R. Wenham, IEEE Trans. Electron Devices 0018-9383 46, 1940 (1999). 10.1109/16.791982 (Pubitemid 30523978)
2. J. Zhao, A. Wang, P. Campbell, and M. A. Green, IEEE Trans. Electron Devices 0018-9383 46, 1978 (1999). 10.1109/16.791985 (Pubitemid 30523981)
3. M. Seol, H. Kim, Y. Tak, and K. Yong, Chem. Commun. (Cambridge) 1359-7345 2010, 5521.
4. J. Y. Jung, Z. Guo, S. W. Jee, H. D. Um, K. T. Park, and J. H. Lee, Opt. Express 1094-4087 18, A286 (2010). 10.1364/OE.18.00A286
5. G. Y. Chen, K. B. Zheng, X. L. Mo, D. L. Sun, Q. H. Meng, and G. R. Chen, Mater. Lett. 0167-577X 64, 1336 (2010). 10.1016/j.matlet.2010.03.037
6. L. Tsakalakos, J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima, and J. Rand, Appl. Phys. Lett. 0003-6951 91, 233117 (2007). 10.1063/1.2821113 (Pubitemid 350234497)
7. J. -Y. Yang, C. -W. Liu, C. -L. Cheng, J. -T. Jeng, B. -T. Dai, J. -S. Lin, and K. -C. Chen, IEEE Electron Device Lett. 0741-3106 30, 1299 (2009). 10.1109/LED.2009.2032132
8. O. Muskens, J. Rivas, R. Algra, E. Bakkers, and A. Lagendijk, Nano Lett. 1530-6984 8, 2638 (2008). 10.1021/nl0808076
9. E. Garnett and P. Yang, Nano Lett. 1530-6984 10, 1082 (2010). 10.1021/nl100161z
10. M. Zhang, K. Peng, X. Fan, J. Jie, R. Zhang, S. Lee, and N. Wong, J. Phys. Chem. C 1932-7447 112, 4444 (2008). 10.1021/jp077053o
11. Z. Huang, X. Zhang, M. Reiche, L. Liu, W. Lee, T. Shimizu, S. Senz, and U. Gosele, Nano Lett. 1530-6984 8, 3046 (2008). 10.1021/nl802324y
12. K. Q. Peng, X. Wang, and S. T. Lee, Appl. Phys. Lett. 0003-6951 92, 163103 (2008). 10.1063/1.2909555 (Pubitemid 351590729)
13. C. Chen, R. Jia, H. H. Yue, H. F. Li, X. Y. Liu, T. C. Ye, K. Seiya, T. Hashizume, S. L. Wang, J. H. Chu, and B. S. Xu, J. Vac. Sci. Technol. B 1071-1023 29, 021014 (2011). 10.1116/1.3548876
14. J. Schmidt, M. Kerr, and A. Cuevas, Semicond. Sci. Technol. 0268-1242 16, 164 (2001). 10.1088/0268-1242/16/3/308 (Pubitemid 32259318)
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Chap., p. 794.
16. T. Markvart and L. Castaner, Solar Cells: Materials, Manufacture and Operation, 1st ed. (Elsevier, Oxford, 2005), p. 9.