A high Schottky barrier between Ni and S-passivated n-type Si(1 0 0) surface

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1778-1781

  Song, G ^a   Ali, M Y ^a   Tao, M ^a  

^a The University of Texas at Arlington   (United States)

Author keywords

Schottky barriers; Semiconductor metal interfaces; Silicon; Sulfur; Surface treatment

Indexed keywords

ACTIVATION ENERGY; ALUMINA; CIVIL AVIATION; HEAT CONDUCTION; NICKEL ALLOYS; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON; SULFUR; SURFACE TREATMENT; VOLTAGE MEASUREMENT;

BAND BARRIERS; BARRIER HEIGHTS; CARRIER CONDUCTIONS; P-N JUNCTIONS; SCHOTTKY BARRIERS; SCHOTTKY JUNCTIONS; SEMICONDUCTOR-METAL INTERFACES; SULFUR PASSIVATIONS; SURFACE STATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 55049108859     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.07.008     Document Type: Article

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