Defect causing nonideality in nearly ideal Au/Si Schottky barrier

Applied Surface Science

Volumn 159, Issue , 2000, Pages 154-160

  Maeda, Keiji ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GOLD; INTERFACES (MATERIALS); SEMICONDUCTING SILICON;

INTERSTITIALS; METAL-INDUCED GAP STATE (MIGS); NONIDEALITY FACTORS; SCHOTTKY BARRIER HEIGHT (SBH);

SCHOTTKY BARRIER DIODES;

EID: 0034205920     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00070-2     Document Type: Article

References (16)

1. Maeda K., Kitahara E. Appl. Surf. Sci. 130-132:1998;925.
2. Rhoderick E.H., Williams R.H. Metal-Semiconductor Contacts. 2nd edn. 1988;Clarendon Press, Oxford.
3. Werner J.H., Guettler H.H. J. Appl. Phys. 59:1991;1552.
4. Palm H., Arbes M., Schulz M. Phys. Rev. Lett. 71:1993;2224.
5. Moench W. Semiconductor Surfaces and Interfaces. 2nd edn. 1995;Springer, Berlin.
6. Weitering H.H., Sullivan J.P., Carolissen R.J., Perez-Sandoz R., Graham W.R., Tung R.T. J. Appl. Phys. 79:1996;7820.
7. Aboelfotoh M.O., Cros A., Svenson B.G., Tu K.N. Phys. Rev. B. 41:1990;9819.
8. K. Maeda, unpublished.
9. Car R., Kelly P.J., Oshiyama A., Pantelides S.T. Phys. Rev. Lett. 52:1984;1814.
10. Lee W.-C., Lee S.-G., Chang K.J. J. Phys.: Condens. Matter. 10:1998;995.
11. Goesele U.M., Tan T.Y. Schroeter W. Materials Science and Technology. vol. 4:1991;197 VCH, Weinheim.
12. Hiraki A. Surf. Sci. Rep. 3:1984;357.
13. Yeh J.J., Hwang J., Bertness K., Friedman D.J., Cao R., Lindau I. Phys. Rev. Lett. 70:1993;3768.
14. Wittmer M., Tu K.N. Phys. Rev. B. 29:1984;2010.
15. Watkins G.D. Schroeter W. Materials Science and Technology. vol. 4:1991;105 VCH, Weinheim.
16. Tung R.T. Phys. Rev. B. 45:1992;13509.