Response to "comment on Deep ultraviolet and near infrared photodiode based on n-ZnO/p -silicon nanowire heterojunction at low temperature' " [Appl. Phys. Lett. 94, 166102 (2009)]

Applied Physics Letters

Volumn 94, Issue 16, 2009, Pages

  Zhou, Hai ^a,b   Fang, Guojia ^a,b   Yuan, Longyan ^a   Wang, Chong ^a   Yang, Xiaoxia ^a   Huang, Huihui ^a   Zhou, Conghua ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED PHYSICS; DEEP ULTRAVIOLETS; ELECTROLESS METAL DEPOSITIONS; GRAIN SIZES; LOW TEMPERATURES; NEAR-INFRARED PHOTODIODES; RADIO FREQUENCIES; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURES; SILICON NANOWIRES; SILICON SAMPLES; SURFACE INTERFACES; ZNO;

HETEROJUNCTION BIPOLAR TRANSISTORS; INFRARED DEVICES; NANOWIRES; OXYGEN; OXYGEN VACANCIES; PHOTODIODES; SEMICONDUCTING ZINC COMPOUNDS; SILICON WAFERS; SURFACE DEFECTS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65149097992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3119200     Document Type: Article

References (5)

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5. Y. J. Lin, Appl. Phys. Lett. 0003-6951 94, 166102 (2009).