Low frequency noise measurements on TiN/n-Si Schottky diodes

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 390-393

  Lee, J I ^a   Brini, J ^a   Kamarinos, G ^a   Dimitriadis, C A ^b   Logothetidis, S ^b   Patsalas, P ^b  

^a Grenoble INP Phelma   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; MAGNETRON SPUTTERING; SIGNAL NOISE MEASUREMENT; TEMPERATURE; TITANIUM COMPOUNDS;

DEPOSITION TEMPERATURE DEPENDENCE; MOBILITY FLUCTUATION; POWER SPECTRAL DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0032630861     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00723-5     Document Type: Article

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