Capacitance-voltage and current-voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer

Journal of Physics D: Applied Physics

Volumn 42, Issue 16, 2009, Pages

  Lin, Yow Jon ^a   Huang, Bo Chieh ^a   Lien, Yi Chun ^a   Lee, Ching Ting ^b   Tsai, Chia Lung ^a   Chang, Hsing Cheng ^c  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CAPACITANCE VOLTAGE; ELECTRON-INJECTION BARRIER; ETHYLENEDIOXYTHIOPHENES; INTERFACIAL DIPOLES; INTERFACIAL PHENOMENA; METAL ELECTRODES; PEDOT:PSS; POLY(4-STYRENESULFONATE); REVERSE-BIAS; SCHOTTKY CONTACTS; SCHOTTKY JUNCTIONS; SI SCHOTTKY DIODE;

CAPACITANCE; CONDUCTING POLYMERS; ORGANIC CONDUCTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70149103540     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/16/165104     Document Type: Article

References (41)

1. Karata, Altindal, Türüt A and zmen A 2003 Appl. Surf. Sci. 217 250
2. Dökme I and A 2006 Semicond. Sci. Technol. 21 1053
3. Zhdan A G, Kukharskaya N F and Chucheva G V 2003 Semiconductors 37 661
4. Zhu L Q, Barrett N, Jégou P, Martin F, Leroux C, Martinez E, Grampeix H, Renault O and Chabli A 2009 J. Appl. Phys. 105 024102
5. Liao M H, Kuo P S, Jan S R, Chang S T and Liu C W 2006 Appl. Phys. Lett. 88 143509
6. Chand S and Kumar J 1996 Appl. Phys. A 63 171
7. Xing J, Jin K, He M, Lu H, Liu G and Yang G 2008 J. Phys. D: Appl. Phys. 41 195103
8. Maeda K 2000 Appl. Surf. Sci. 159-160 154
9. Tejedor C, Flores F and Louis E 1977 J. Phys. C: Solid State Phys. 10 2163
10. Mizsei J 2002 Vacuum 67 59
11. Yeh J J, Hwang J, Bertness K, Friedman D J, Cao R and Lindau I 1993 Phys. Rev. Lett. 70 3768
12. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Oxford: Clarendon)
13. Fernandez A, Hallen H D, Huang T, Buhrman R A and Silcox J 1990 Appl. Phys. Lett. 57 2826
14. Afandiyeva I M, Dökme, Altindal, Abdullayeva L K and Askerov Sh G 2008 Microelectron. Eng. 85 365
15. Tao M, Agarwal S, Udeshi D, Basit N, Maldonado E and Kirk W P 2003 Appl. Phys. Lett. 83 2593
16. Ali M Y and Tao M 2007 J. Appl. Phys. 101 103708
17. Kumar S, Katharria Y S and Kanjilal D 2008 J. Appl. Phys. 103 044504
18. Wong H S, Chan L, Samudra G and Yeo Y C 2008 Appl. Phys. Lett. 93 072103
19. Gong Y P, Li A D, Qian X, Zhao C and Wu D 2009 J. Phys. D: Appl. Phys. 42 015405
20. Horvth Z J, dm M, Szabó I, Serényi M and Tuyen V V 2002 Appl. Surf. Sci 190 441
21. Song G, Ali M Y and Tao M 2008 Solid-State Electron. 52 1778
22. Lonergan M C 1997 Science 278 2103
23. Jones F E, Wood B P, Myers J A, Hafer C D and Lonergan M C 1999 J. Appl. Phys. 86 6431
24. Nakano M, Tsukazaki A, Gunji R Y, Ueno K, Ohtomo A, Fukumura T and Kawasaki M 2007 Appl. Phys. Lett. 91 142113
25. Lin Y J 2008 Appl. Phys. Lett. 92 046101
26. Mridha S and Basak D 2008 Appl. Phys. Lett. 92 142111
27. Lin Y J 2005 Appl. Phys. Lett. 86 122109
28. Kim S Y, Baik J M, Yu H K and Lee J L 2005 J. Appl. Phys. 98 093707
29. Lin Y J, Yang F M, Huang C Y, Chou W Y, Chang J and Lien Y C 2007 Appl. Phys. Lett. 91 092127
30. Lin Y J, Chang S S, Chang H C and Liu Y C 2009 J. Phys. D: Appl. Phys. 42 075308
31. Hacke P, Detchprohm T, Hiramatsu K and Sawaki N 1993 Appl. Phys. Lett. 63 2676
32. Neamen D A 2003 Semiconductor Physics and Devices (Boston, MA: McGraw-Hill)
33. Osvald J 2004 Solid-State Electron. 48 2347
34. Hiraki A 1983 Surf. Sci. Rep. 3 357
35. Ishii H, Sugiyama K, Ito E and Seki K 1999 Adv. Mater. 11 605
36. Kim S Y and Lee J L 2005 Appl. Phys. Lett. 87 232105
37. Agrawal R and Ghosh S 2006 Appl. Phys. Lett. 89 222114
38. Koch N, Elschner A, Johnson R L and Rabe J P 2005 Appl. Surf. Sci. 244 593
39. Koch N, Kahn A, Ghijsen J, Pireaux J J, Schwartz J, Johnson R L and Elschner A 2003 Appl. Phys. Lett. 82 70
40. Grant R W, Kraut E A, Kowalczyk S P and Waldrop J R 1983 J. Vac. Sci. Technol. B 1 320
41. Puthenkovilakam R and Chang J P 2004 Appl. Phys. Lett. 84 1353