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Journal of Applied Physics

Volumn 114, Issue 14, 2013, Pages

Highly nonlinear defect-induced carrier recombination rates in semiconductors

(4) Modine, N A a Armstrong, A M a Crawford, M H a Chow, W W a

a SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; CARRIER RECOMBINATION; DEFECTS IN SEMICONDUCTORS; EFFICIENCY AND PERFORMANCE; NONLINEAR DEPENDENCE; OPTICAL EFFICIENCY; RADIATIVE RECOMBINATION; RECOMBINATION MECHANISMS;

CARRIER CONCENTRATION; LIGHT EMITTING DIODES;

DEFECTS;

EID: 84885973531 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4824065 Document Type: Article

Times cited : (12)

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