Luminescence properties of hole traps in homojunction gallium nitride diodes grown by metal organic vapour phase epitaxy

Materials Science and Engineering: B

Volumn 130, Issue 1-3, 2006, Pages 173-176

  Asghar, M ^a   Muret, P ^b   Hussain, I ^a   Beaumont, B ^c   Gibart, P ^c   Shahid, M ^a  

^a THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

^b CNRS   (France)

^c CRHEA CNRS   (France)

Author keywords

Activation energy; DLTS; Gallium nitride; Hole traps; Luminescence; MOVPE

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; GALLIUM NITRIDE; HOLE TRAPS; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY;

CAPTURE CROSS SECTION; P-N JUNCTION DIODES; RADIATIVE RECOMBINATION; TRAP CONCENTRATION;

SEMICONDUCTOR DIODES;

EID: 33846217875     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2006.03.004     Document Type: Article

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