Deep electron and hole traps in neutron transmutation doped n-GaN

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

  Lee, In Hwan ^a   Polyakov, A Y ^a   Smirnov, N B ^b   Govorkov, A V ^b   Kozhukhova, E A ^b   Kolin, N G ^c   Boiko, V M ^c   Korulin, A V ^c   Pearton, S J ^d  

^a Chonbuk National University   (South Korea)

^b INSTITUTE OF RARE METALS   (Russian Federation)

^c KARPOV INSTITUTE OF PHYSICAL CHEMISTRY   (Russian Federation)

^d J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEXATION; ELECTRIC PROPERTIES; ELECTRON TRAPS; GALLIUM NITRIDE; GERMANIUM; HOLE CONCENTRATION; HOLE TRAPS;

ANNEAL TEMPERATURES; ELECTRON AND HOLE TRAPS; NEUTRON FLUENCES; NEUTRON TRANSMUTATION-DOPED; RADIATION DEFECTS; THERMAL NEUTRONS; VACANCY COMPLEXES;

NEUTRONS;

EID: 80051891515     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3596571     Document Type: Article

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