Assessment of "normally on" and "quasi on" SiC VJFET's in half-bridge circuits

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1153-1156

  Mazzola, M S ^a   Casady, J B ^b   Merrett, N ^b   Sankin, I ^b   Draper, W ^b   Seale, D ^a   Bondarenko, V ^a   Koshka, Y ^a   Gafford, J ^a   Kelley, R ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b SemiSouth Laboratories Inc   (United States)

Author keywords

Normally On; Quasi On; Safe Operating Area; VJFET

Indexed keywords

CIRCUIT THEORY; ELECTRIC RESISTANCE; ELECTRIC SWITCHES; GATES (TRANSISTOR); JUNCTION GATE FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; POWER ELECTRONICS;

NORMALLY ON; QUASI ON; SAFE OPERATING AREA (SOA); VERTICAL JUNCTION FIELD EFFECT TRANSISTORS (VJFET);

SILICON CARBIDE;

EID: 8744249283     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1153     Document Type: Conference Paper

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