Developing an effective and robust process for manufacturing bipolar SiC power devices

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 77-80

  Sumakeris, J J ^a   Hull, Brett A ^a   O’Loughlin, Michael J ^a   Skowronski, Marek ^b   Balakrishna, V ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Basal plane dislocations; Bipolar power devices; Dislocation conversion; Forward voltage drift; Shockley stacking faults; Threading edge dislocations

Indexed keywords

EDGE DISLOCATIONS; EPILAYERS; ETCHING; OPTIMIZATION; SILICON CARBIDE;

BASAL PLANE DISLOCATIONS; BPD DENSITIES; EPIWAFERS; EXTENDED DEFECT; FORWARD VOLTAGE; POWER DEVICES; SMOOTH SURFACE; THREADING EDGE DISLOCATION;

POWER SEMICONDUCTOR DEVICES;

EID: 38449105172     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.77     Document Type: Conference Paper

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