Comparison of 4H-SiC pn, pinch and schottky diodes for the 3 kV range

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1125-1128

  Peters, Dethard ^a   Friedrichs, Peter ^a   Schörner, Reinhold ^a   Stephani, Dietrich ^a  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

4H SiC; High voltage; Pinch diodes; Pn junctions; Schottky diodes; Switching behavior

Indexed keywords

DIODES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; PINCH EFFECT; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

4H-SIC; HIGH VOLTAGE; P-N JUNCTION; PINCH DIODE; SCHOTTKY DIODES; SWITCHING BEHAVIORS; PINCH DIODES;

POWER SEMICONDUCTOR DIODES; SCHOTTKY BARRIER DIODES;

EID: 0036435359     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1125     Document Type: Conference Paper

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