High-voltage, high-frequency SiC power MOSFETs model validation

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2007, Pages 1018-1022

  Ortiz Rodriguez J M ^a   Duong, T ^a   Rivera Lopez A ^a   Heftier Jr , A R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BEHAVIORAL RESEARCH; CIRCUIT SIMULATION; MOSFET DEVICES; SILICON CARBIDE;

CIRCUIT SIMULATORS; HIGH FREQUENCIES; HIGH VOLTAGES; INDUCTIVE LOADS; MODEL VALIDATIONS; POWER-MOSFETS; RESISTIVE LOADS; STATE CONDUCTION;

POWER ELECTRONICS;

EID: 48349091978     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2007.4342130     Document Type: Conference Paper

References (8)

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