High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2005, Pages 393-398

  Hornberger, J M ^a   Mounce, S D ^a   Schupbach, R M ^a   Lostetter, A B ^a   Mantooth, H Alan ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b 3202 Bell Engineering Center   (United States)

Author keywords

High temperature electronics; High temperature packaging; Multichip power modules (MCPMs); Silicon carbide (SiC); Silicon on Insulator (SOI)

Indexed keywords

ELECTRIC SWITCHES; ELECTRONICS PACKAGING; HIGH TEMPERATURE ENGINEERING; JUNCTION GATE FIELD EFFECT TRANSISTORS; MINIATURE INSTRUMENTS; MOSFET DEVICES; POWER ELECTRONICS; SILICON ON INSULATOR TECHNOLOGY;

HIGH-TEMPERATURE ELECTRONICS; HIGH-TEMPERATURE PACKAGING; MULTICHIP POWER MODULE (MCPM) APPLICATIONS; MULTICHIP POWER MODULES (MCPM); SILICON ON INSULATOR (SOI);

SILICON CARBIDE;

EID: 33745920183     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518338     Document Type: Conference Paper

References (10)

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