SCOPUS 정보 검색 플랫폼

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 889-894

Bipolar SiC-diodes – Challenges arising from physical and technological aspects

(3) Bartsch, W a Mitlehner, H a Gediga, S b

a SiCED Electronics Development GmbH and Co KG (Germany)

b SIEMENS AG (Germany)

Author keywords

Bipolar diode; Emitter efficiency; P Emitter; PiN diode; Transient measurement

Indexed keywords

DIODES; HVDC POWER TRANSMISSION; SILICON CARBIDE; SILICON WAFERS;

BIPOLAR DIODES; CURRENT LEVELS; DC-LINK VOLTAGES; HIGH VOLTAGE; JUNCTION TEMPERATURES; PIN DIODE; TECHNOLOGICAL ASPECTS; TRANSIENT MEASUREMENT;

POWER SEMICONDUCTOR DIODES;

EID: 38449111315 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.556-557.889 Document Type: Conference Paper

Times cited : (6)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.