SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 110, Issue , 2013, Pages 311-314

Deep reactive ion etching of in situ boron doped LPCVD Ge 0.7Si0.3 using SF6 and O2 plasma

(3) Kazmi, S N R a Salm, C a Schmitz, J a

a UNIVERSITY OF TWENTE (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GERMANIUM; SEMICONDUCTOR DOPING; SILICON; SULFUR HEXAFLUORIDE;

BORON CONCENTRATIONS; BORON DOPING CONCENTRATION; CHEMICAL VAPOR DEPOSITED; DEEP REACTIVE ION ETCHING; DOPANT CONCENTRATIONS; HIGH SELECTIVITY; MICRO RESONATORS; OPTIMIZED CONDITIONS;

REACTIVE ION ETCHING;

EID: 84885189551 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.02.034 Document Type: Article

Times cited : (3)

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