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Volumn 10, Issue 8-9, 2004, Pages 603-607

Anisotropic Si deep beam etching with profile control using SF 6/O2 Plasma

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; MICROACTUATORS; MICROSENSORS; OXYGEN; PRESSURE EFFECTS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON; SINGLE CRYSTALS; SULFUR COMPOUNDS;

EID: 9944233543     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-003-0338-3     Document Type: Article
Times cited : (15)

References (17)
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  • 3
    • 0036572851 scopus 로고    scopus 로고
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    • Syms, R.R.A.1
  • 7
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    • Deep and fast plasma etching for silicon micromachining
    • Francou M; Danel JS; Peccoud L (1995) Deep and fast plasma etching for silicon micromachining. Sens Actuators Phys A 46-47: 17-21
    • (1995) Sens Actuators Phys A , vol.46-47 , pp. 17-21
    • Francou, M.1    Danel, J.S.2    Peccoud, L.3
  • 8
    • 4243111994 scopus 로고
    • Fabrication of large scale optical components in silicon by reactive ion etching
    • Darbyshire DA; Pitt CW; Stride AA (1987) Fabrication of large scale optical components in silicon by reactive ion etching. J Vac Sci Technol B 5(2): 575-578
    • (1987) J Vac Sci Technol B , vol.5 , Issue.2 , pp. 575-578
    • Darbyshire, D.A.1    Pitt, C.W.2    Stride, A.A.3
  • 10
    • 9944259220 scopus 로고
    • U.S. Pat. 4855017, U. S. Pat. 4784720, and Germany Pat. 4241045C
    • Bosch Gmbh RB (1994) U.S. Pat. 4855017, U. S. Pat. 4784720, and Germany Pat. 4241045C
    • (1994)
  • 13
    • 0029325460 scopus 로고
    • The black silicon method: A universal method for determining the parameter setting of a fluorine based reactive ion etcher in deep silicon trench etching with profile control
    • Jansen HV; Deboer MJ; Legtenberg R; Elwenspoek MC (1995) The black silicon method: A universal method for determining the parameter setting of a fluorine based reactive ion etcher in deep silicon trench etching with profile control. J Micromech Microeng 5: 115-120
    • (1995) J Micromech Microeng , vol.5 , pp. 115-120
    • Jansen, H.V.1    Deboer, M.J.2    Legtenberg, R.3    Elwenspoek, M.C.4
  • 14
    • 0028333279 scopus 로고
    • Scream I: A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures
    • Shaw KA; Zhang ZL; MacDonald NC (1994) Scream I: a single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures. Sensors and Actuators A 40: 63-70
    • (1994) Sensors and Actuators A , vol.40 , pp. 63-70
    • Shaw, K.A.1    Zhang, Z.L.2    MacDonald, N.C.3
  • 15
    • 0035450041 scopus 로고    scopus 로고
    • The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMS
    • Volland BE; Heerlein H; Kostic I; Rangelow IW (2001) The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMS. Microele Eng 57-58: 641-650
    • (2001) Microele Eng , vol.57-58 , pp. 641-650
    • Volland, B.E.1    Heerlein, H.2    Kostic, I.3    Rangelow, I.W.4
  • 16
    • 0034272682 scopus 로고    scopus 로고
    • Plasma etching: Principles, mechanisms, application to micro- And nanotechnologies
    • Cardinaud C; Peignon MC; Tessier PY (2000) Plasma etching: principles, mechanisms, application to micro- and nanotechnologies. Appl Surf Sci 164: 72-83
    • (2000) Appl Surf Sci , vol.164 , pp. 72-83
    • Cardinaud, C.1    Peignon, M.C.2    Tessier, P.Y.3
  • 17
    • 0001590687 scopus 로고
    • Influence of reactant transport of fluorine reactive of ion etching of deep trenches in silicon
    • Arnold JC; Gray DC; Sawin HH (1993) Influence of reactant transport of fluorine reactive of ion etching of deep trenches in silicon. J Vac Sci Technol B 11(6): 2071-2080
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.