The saturation effect of etch depth at high RF power in CF 4 plasma RIE silicon etching

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2000, Pages 228-230

  Ehsan, Abang Annuar ^a   Shaari, Sahbudin ^a   Majlis, Burhanuddin Yeop ^a  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH DEPTH; P-TYPE SILICON WAFERS; PROCESS CHAMBERS; RF-POWER; SATURATION EFFECTS; SILICON ETCHING;

ETCHING;

SILICON WAFERS;

EID: 84864644192     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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