Reactive ion etching of Si1-xGex alloy with hydrogen bromide

Journal of Crystal Growth

Volumn 227, Issue 228, 2001, Pages 801-804

  Guo, Lin ^a   Li, Kaicheng ^a   Liu, Daoguang ^a   Ou, Yihong ^a   Zhang, Jing ^a   Yi, Qiang ^a   Xu, Shiliu ^a  

^a Sichuan Institute of Solid State Circuits   (China)

Author keywords

A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B1. Reactive ion etching; B3. Bipolartransistors; B3. Heterojunction semiconductor devices

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; HYDROGEN INORGANIC COMPOUNDS; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS;

HYDROGEN BROMIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035399381     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00864-8     Document Type: Article

References (9)

1. Properties of silicon germanium and SiGe:Carbon