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Volumn 3, Issue , 2013, Pages

Ag/GeS x /Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures

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EID: 84885117287     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep02856     Document Type: Article
Times cited : (43)

References (27)
  • 3
    • 67650102619 scopus 로고    scopus 로고
    • Redox-based resistive switching memories-nanoionic mechanisms prospects, and challenges
    • Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges. Adv. Mater. 21, 2632-2663 (2009
    • (2009) Adv. Mater , vol.21 , pp. 2632-2663
    • Waser, R.1    Dittmann, R.2    Staikov, G.3    Szot, K.4
  • 4
    • 84855463299 scopus 로고    scopus 로고
    • Atomic switch: Atom/ion movement controlled devices for beyond von-neumann computers
    • Hasegawa, T., Terabe, K., Tsuruoka, T. & Aono, M. Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers. Adv. Mater. 24, 252-267 (2012
    • (2012) Adv. Mater , vol.24 , pp. 252-267
    • Hasegawa, T.1    Terabe, K.2    Tsuruoka, T.3    Aono, M.4
  • 6
    • 84862770850 scopus 로고    scopus 로고
    • Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
    • Valov, I. et al. Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces. Nat. Mater. 11, 530-535 (2012
    • (2012) Nat. Mater , vol.11 , pp. 530-535
    • Valov, I.1
  • 7
    • 84859476229 scopus 로고    scopus 로고
    • Electrochemical deposition of germanium sulfide from room-Temperature ionic liquids and subsequent ag doping in an aqueous solution
    • Murugesan, S., Kearns, P. & Stevenson, K. J. Electrochemical Deposition of Germanium Sulfide from Room-Temperature Ionic Liquids and Subsequent Ag Doping in an Aqueous Solution. Langmuir 28, 5513-5517 (2012 A
    • (2012) Langmuir , vol.28 , pp. 5513-5517
    • Murugesan, S.1    Kearns, P.2    Stevenson, K.J.3
  • 8
    • 84856243482 scopus 로고    scopus 로고
    • Quantized conductance in ag/ges2/w conductive-bridge memory cells
    • Jameson, J. R. et al. Quantized Conductance in Ag/GeS2/W Conductive-Bridge Memory Cells. IEEE Electron Device Lett. 33, 257-259 (2012
    • (2012) IEEE Electron Device Lett , vol.33 , pp. 257-259
    • Jameson, J.R.1
  • 9
    • 84876156021 scopus 로고    scopus 로고
    • Electrochemical simulation of filament growth and dissolution in conductive-bridging ram (cbram) with cylindrical coordinates.2012
    • 3.4
    • Lin, S. et al. Electrochemical Simulation of Filament Growth and Dissolution in Conductive-Bridging RAM (CBRAM) with Cylindrical Coordinates. 2012 IEEE International Electron Devices Meeting (IEDM 26.3.1-26.3.4 (2012
    • (2012) IEEE International Electron Devices Meeting (IEDM) , vol.26 , Issue.3 , pp. 1-26
    • Lin, S.1
  • 11
    • 84876108165 scopus 로고    scopus 로고
    • Sb-doped ges2 as performance and reliability booster in conductive bridge ram.2012
    • 5.4
    • Vianello, E. et al. Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM. 2012 IEEE International Electron Devices Meeting (IEDM 31.5.1-31.5.4 (2012
    • (2012) IEEE International Electron Devices Meeting (IEDM) , vol.31 , Issue.5 , pp. 1-31
    • Vianello, E.1
  • 12
    • 84877754319 scopus 로고    scopus 로고
    • Nanobatteries in redox-based resistive switches require extension of memristor theory
    • Valov, I. et al.Nanobatteries in redox-based resistive switches require extension of memristor theory. Nature Communications 4, 1771 (2013
    • (2013) Nature Communications , vol.4 , pp. 1771
    • Valov, I.1
  • 13
    • 84883706267 scopus 로고    scopus 로고
    • Simulation of polarity independent reset in electrochemical metallization memory cells.2013 5th
    • Menzel, S. et al. Simulation of polarity independent RESET in electrochemical metallization memory cells. 2013 5th IEEE International Memory Workshop (IMW 92-95 (2013
    • (2013) IEEE International Memory Workshop (IMW , pp. 92-95
    • Menzel, S.1
  • 14
    • 84870576722 scopus 로고    scopus 로고
    • On the impact of ag doping on performance and reliability of ges2-based conductive bridge memories
    • Vianello, E. et al. On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories. ESSDERC 2012-42nd European Solid State Device Research Conference, 278-281 (2012
    • (2012) ESSDERC 2012-42nd European Solid State Device Research Conference , pp. 278-281
    • Vianello, E.1
  • 15
    • 84876354591 scopus 로고    scopus 로고
    • The parallel approach
    • Di Ventra, M. & Pershin, Y. V. The parallel approach. Nat. Phys. 9, 200-202 (2013
    • (2013) Nat. Phys , vol.9 , pp. 200-202
    • Di Ventra, M.1    Pershin, Y.V.2
  • 16
    • 77950852717 scopus 로고    scopus 로고
    • Memristive switches enable 'stateful' logic operations via material implication
    • Borghetti, J. et al. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature 464, 873-876 (2010
    • (2010) Nature , vol.464 , pp. 873-876
    • Borghetti, J.1
  • 17
    • 79960577928 scopus 로고    scopus 로고
    • Crossnets: Neuromorphic hybrid cmos/nanoelectronic networks
    • Likharev, K. K. CrossNets: Neuromorphic Hybrid CMOS/Nanoelectronic Networks. Science of Advanced Materials 3, 322-331 (2011
    • (2011) Science of Advanced Materials , vol.3 , pp. 322-331
    • Likharev, K.K.1
  • 18
    • 79959346864 scopus 로고    scopus 로고
    • Inherent diode isolation in programmable metallization cell resistive memory elements
    • Puthentheradam, S. C., Schroder, D. K. & Kozicki, M. N. Inherent diode isolation in programmable metallization cell resistive memory elements. Appl. Phys. A-Mater. Sci. Process. 102, 817-826 (2011
    • (2011) Appl. Phys. A-Mater. Sci. Process , vol.102 , pp. 817-826
    • Puthentheradam, S.C.1    Schroder, D.K.2    Kozicki, M.N.3
  • 19
    • 84866722255 scopus 로고    scopus 로고
    • High current density and nonlinearity combination of selection device based on taox/tio2/taox structure for one selector one resistor arrays
    • Lee, W. et al. High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector-One Resistor Arrays. ACS Nano 6, 8166-8172 (2012
    • (2012) ACS Nano , vol.6 , pp. 8166-8172
    • Lee, W.1
  • 20
    • 77951622926 scopus 로고    scopus 로고
    • Complementary resistive switches for passive nanocrossbar memories
    • Linn, E., Rosezin, R., Kügeler, C. &Waser, R. Complementary Resistive Switches for Passive Nanocrossbar Memories. Nat. Mater. 9, 403-406 (2010
    • (2010) Nat. Mater , vol.9 , pp. 403-406
    • Linn, E.1    Rosezin, R.2    Kügeler, C.3    Waser, R.4
  • 21
    • 84864485488 scopus 로고    scopus 로고
    • Analysis of complementary rram switching
    • Wouters, D. J. et al. Analysis of Complementary RRAM Switching. IEEE Electron Device Lett. 33, 1186-1188 (2012
    • (2012) IEEE Electron Device Lett , vol.33 , pp. 1186-1188
    • Wouters, D.J.1
  • 22
    • 84871803750 scopus 로고    scopus 로고
    • Uniform complementary resistive switching in tantalum oxide using current sweeps
    • Schmelzer, S., Linn, E., Böttger, U.&Waser, R. Uniform Complementary Resistive Switching in Tantalum Oxide Using Current Sweeps. IEEE Electron Device Lett 114-116 (2013
    • (2013) IEEE Electron Device Lett , pp. 114-116
    • Schmelzer, S.1    Linn, E.2    Böttger, U.3    Waser, R.4
  • 23
    • 84870940337 scopus 로고    scopus 로고
    • Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer
    • Tang, G. et al. Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer. Nanoscale 5, 422-428 (2013
    • (2013) Nanoscale , vol.5 , pp. 422-428
    • Tang, G.1
  • 24
    • 84874980731 scopus 로고    scopus 로고
    • Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament
    • Balatti, S., Larentis, S., Gilmer, D. C. & Ielmini, D. Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament. Advanced Materials 25, 1474-1478 (2013
    • (2013) Advanced Materials , vol.25 , pp. 1474-1478
    • Balatti, S.1    Larentis, S.2    Gilmer, D.C.3    Ielmini, D.4
  • 25
    • 84883502868 scopus 로고    scopus 로고
    • Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications
    • Linn, E.,Menzel, S., Ferch, S.&Waser, R. Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications. Nanotechnology 24, 384008 (2013
    • (2013) Nanotechnology , vol.24 , pp. 384008
    • Linn, E.1    Menzel, S.2    Ferch, S.3    Waser, R.4
  • 26
    • 84873649755 scopus 로고    scopus 로고
    • Cation-based resistance change memory
    • Valov, I. & Kozicki, M. N. Cation-based resistance change memory. J. Phys. D Appl. Phys. 46, 074005 (2013
    • (2013) J. Phys. D Appl. Phys , vol.46 , pp. 074005
    • Valov, I.1    Kozicki, M.N.2
  • 27
    • 84872605258 scopus 로고    scopus 로고
    • Preparation and characterization of gesx thin-films for resistive switching memories
    • van den Hurk, J., Valov, I. &Waser, R. Preparation and characterization of GeSx thin-films for resistive switching memories. Thin Solid Films 527, 299-302 (2012
    • (2012) Thin Solid Films , vol.527 , pp. 299-302
    • Van Den Hurk, J.1    Valov, I.2    Waser, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.