SCOPUS 정보 검색 플랫폼

Volumn 527, Issue , 2013, Pages 299-302

Preparation and characterization of GeSx thin-films for resistive switching memories

(3) Van Den Hurk, Jan a Valov, Ilia b Waser, Rainer a,b

Author keywords

Electrochemical metallization memory cells; Germanium sulphide; Keywords; Memory cells; Resistive random access memory; Resistive switching; Sputter deposition; Stoichiometry; Thin films

Indexed keywords

GERMANIUM SULPHIDE; KEYWORDS; MEMORY CELL; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING;

CHEMICAL PROPERTIES; SEMICONDUCTOR STORAGE; SPUTTER DEPOSITION; STOICHIOMETRY; SWITCHING SYSTEMS; THIN FILMS; VAPOR DEPOSITION;

FILM PREPARATION;

EID: 84872605258 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.12.032 Document Type: Article

Times cited : (22)

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