Multiple memory states in resistive switching devices through controlled size and orientation of the conductive filament

Advanced Materials

Volumn 25, Issue 10, 2013, Pages 1474-1478

  Balatti, S ^a   Larentis, S ^b   Gilmer, D C ^c   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

^b The University of Texas at Austin   (United States)

^c SEMATECH   (United States)

Author keywords

metal insulator transitions; nanoionics; nonvolatile storage; resistive switching; semiconductor memory

Indexed keywords

CONDUCTIVE FILAMENTS; CONTROLLED SIZE; MULTILEVEL SCHEMES; NANOIONICS; RESISTIVE SWITCHING; RESISTIVE SWITCHING DEVICES; RESISTIVE SWITCHING MEMORY; SEMICONDUCTOR MEMORY;

NONVOLATILE STORAGE; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR STORAGE;

SWITCHING SYSTEMS;

EID: 84874980731     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201204097     Document Type: Article

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