Spatially resolved mapping of electrical conductivity across individual domain (Grain) boundaries in graphene

ACS Nano

Volumn 7, Issue 9, 2013, Pages 7956-7966

  Clark, Kendal W ^a   Zhang, X G ^a   Vlassiouk, Ivan V ^a   He, Guowei ^b   Feenstra, Randall M ^b   Li, An Ping ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

defect; electronic transport; grain boundary; graphene; potentiometry; scanning tunneling microscopy

Indexed keywords

BOUNDARY RESISTANCE; ELECTRICAL CONDUCTIVITY; ELECTRON TRANSPORT; ELECTRONIC TRANSPORT; EPITAXIAL GRAPHENE; POTENTIOMETRY; QUANTITATIVE MODELING; SPATIALLY RESOLVED;

DEFECTS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SUBSTRATES;

GRAPHENE;

EID: 84884959263     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403056k     Document Type: Article

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