Correlating electronic transport to atomic structures in self-assembled quantum wires

Nano Letters

Volumn 12, Issue 2, 2012, Pages 938-942

  Qin, Shengyong ^a   Kim, Tae Hwan ^a   Zhang, Yanning ^b   Ouyang, Wenjie ^b   Weitering, Hanno H ^c   Shih, Chih Kang ^d   Baddorf, Arthur P ^a   Wu, Ruqian ^b   Li, An Ping ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

^d UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

defects; electronic coupling; electronic density of states; Electronic transport; localization; nanowire; scanning tunneling microscopy

Indexed keywords

ATOMIC DEFECTS; ATOMIC SCALE; DENSITY FUNCTIONAL THEORY CALCULATIONS; ELECTRON LOCALIZATIONS; ELECTRONIC CONDUCTANCE; ELECTRONIC CONDUCTORS; ELECTRONIC COUPLING; ELECTRONIC DENSITY; ELECTRONIC TRANSPORT; ENVIRONMENTAL CHANGE; FUNDAMENTAL COMPONENT; INTER-WIRE COUPLING; LOCALIZATION; LOW TEMPERATURES; METALLIC STATE; NANOTRANSPORT; ONE-DIMENSIONAL SYSTEMS; QUANTUM ARCHITECTURE; SELF-ASSEMBLED; SI(1 0 0); STRUCTURAL INSTABILITY;

ATOMS; CRYSTAL ATOMIC STRUCTURE; DEFECTS; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR QUANTUM WIRES; WIRE;

NANOWIRES;

GADOLINIUM; NANOWIRE; QUANTUM DOT; SILICON;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; SEMICONDUCTOR;

GADOLINIUM; MOLECULAR STRUCTURE; NANOWIRES; QUANTUM DOTS; SILICON; TRANSISTORS, ELECTRONIC;

EID: 84856957127     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204003s     Document Type: Article

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