Understanding thickness-dependent charge transport in pentacene transistors by low-frequency noise

IEEE Electron Device Letters

Volumn 34, Issue 10, 2013, Pages 1298-1300

  Xu, Yong ^a   Liu, Chuan ^a   Scheideler, William ^b   Li, Songlin ^a   Li, Wenwu ^a   Lin, Yen Fu ^a   Balestra, Francis ^c   Ghibaudo, Gerard ^a   Tsukagoshi, Kazuhito ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Duke University   (United States)

^c IMEP LAHC   (France)

Author keywords

Contact resistance; film thickness; low frequency noise (LFN); mobility; organic transistors; pentacene; traps

Indexed keywords

CONTACT NOISE; LOW-FREQUENCY NOISE; ORGANIC TRANSISTOR; PENTACENE TRANSISTORS; PENTACENES; TRANSPORT MECHANISM; TRAPS; UPPER SURFACE;

CARRIER MOBILITY; ELECTRON DEVICES; ELECTRONICS ENGINEERING; FILM THICKNESS;

CONTACT RESISTANCE;

EID: 84884814276     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2277613     Document Type: Article

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