Investigation of the device degradation mechanism in pentacene-based thin-film transistors using low-frequency-noise spectroscopy

IEEE Transactions on Electron Devices

Volumn 57, Issue 2, 2010, Pages 385-390

  Ke, Lin ^a   Dolmanan, Surani Bin ^a   Vijila, Chellappan ^a   Chua, Soo Jin ^a,b   Han, Ye Hua ^c   Mei, Ting ^c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Degradation; Low frequency noise; Pentacene; Thin film transistor

Indexed keywords

DEEP LEVEL; DEGRADATION PROCESS; DEVICE CHARACTERISTICS; DEVICE DEGRADATION; DEVICE FAILURES; DEVICE LIFETIME; DIAGNOSTIC TOOLS; FLICKER NOISE; HOOGE'S EMPIRICAL RELATION; INTERFACE TRAPS; LIFETIME TESTS; LOW FREQUENCY; LOW-FREQUENCY NOISE; NOISE BEHAVIOR; NOISE LEVELS; NOISE SPECTROSCOPY; OCTADECYL; ORGANIC THIN FILM TRANSISTORS; ORGANIC TRANSISTOR; PENTACENE; PENTACENE THIN FILM TRANSISTORS; PENTACENES; RECOMBINATION NOISE; TRICHLOROSILANES;

DEGRADATION; DRAIN CURRENT; SEMICONDUCTING ORGANIC COMPOUNDS; THERMAL NOISE; THIN FILMS;

THIN FILM TRANSISTORS;

EID: 76349098433     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2036313     Document Type: Article

References (19)

1. A. Dodabalapur, L. Torsi, and H. E. Katz, "Organic transistors: Twodimensional transport and improved electrical characteristics," Science, vol.268, no.5208, pp. 270-271, Apr. 1995.
2. A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, and J. Rogers, "Organic smart pixels," Appl. Phys. Lett., vol.73, no.2, p. 142, Jul. 1998.
3. H. Sirringhaus, N. Tessler, and R. H. Friend, "Integrated optoelectronic devices based on conjugated polymers," Science, vol.280, no.5370, pp. 1741-1744, Jun. 1998.
4. T. N. Jackson, Y. Y. Lin, D. J. Gundlach, and H. Klauk, "Organic thinfilm transistors for organic light-emitting flat-panel display backplanes," IEEE J. Sel. Topics Quantum Electron., vol.4, no.1, pp. 100-104, Jan./Feb. 1998.
5. A. R. Brown, A. Pomp, M. Hart, and D. M. de Leeuw, "Logic gates made from polymer transistors and their use in ring oscillators," Science, vol.270, no.5238, pp. 972-974, Nov. 1995.
6. M. S. A. Abdou, F. P. Orfino, Y. Son, and S. Holdcroft, "Interaction of oxygen with conjugated polymers: Charge transfer complex formation with poly(3-alkylthiophenes)," J. Amer. Chem. Soc., vol.119, no.19, pp. 4518-4524, May 1997.
7. 2O effect on the stability of organic thin-film field-effect transistors," Appl. Phys. Lett., vol.83, no.8, p. 1644, Aug. 2003.
8. S. Hoshino, M. Yoshida, S. Uemura, T. Kodzasa, N. Takada, T. Kamata, and K. Yase, "Influence of moisture on device characteristics of polythiophene-based field-effect transistors," J. Appl. Phys., vol.95, no.9, p. 5088, May 2004.
9. L. A. Majewski, J. W. Kingsley, C. Balocco, and A. M. Song, "Influence of processing conditions on the stability of poly(3-hexylthiophene)-based field-effect transistors," Appl. Phys. Lett., vol.88, no.22, p. 222 108, May 2006.
10. S. M. Bezrukov and J. J. Kasianowicz, "Current noise reveals protonation kinetics and number of ionizable sites in an open protein ion channel," Phys. Rev. Lett., vol.70, no.15, pp. 2352-2355, Apr. 1993.
11. B. K. Jones, "Logarithmic distributions in reliability analysis," Microelectron. Reliab., vol. 42, no. 4/5, pp. 779-786, Apr./May 2002.
12. M. Fukuda, T. Hirono, and F. Kano, "1/f noise behavior in semiconductor laser degradation," IEEE Photon. Technol. Lett., vol.5, no.10, pp. 1165-1167, Oct. 1993.
13. M. Sampietro, G. Ferrari, D. Natali, U. Scherf, K. O. Annan, F. P. Wenzl, and G. Leising, "Tracking of conduction phenomena and degradation in organic light emitting diodes by current noise measurements," Appl. Phys. Lett., vol.78, no.21, p. 3262, May 2001. (Pubitemid 32479039)
14. P. V. Necliudov, S. L. Rumyantsev, M. S. Shur, D. J. Gundlach, and T. N. Jackson, "1/f noise in pentacene organic thin film transistors," J. Appl. Phys., vol.88, no.9, p. 5395, Nov. 2000.
15. B. R. Conrad, W. G. Cullen, W. Yan, and E. D. Williams, "Percolative effects on noise in pentacene transistors," Appl. Phys. Lett., vol.91, no.24, p. 242 110, Dec. 2007.
16. S. Martin, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz, W. Li, A. Passner, and J. A. Rogers, "Flicker noise properties of organic thinfilm transistors," J. Appl. Phys., vol.87, no.7, p. 3381, Apr. 2000.
17. E. Simoen and C. Claeys, "On the flicker noise in submicron silicon MOSFETs," Solid State Electron., vol.43, no.5, pp. 865-882, May 1999.
18. Y. Maneglia and D. Bauza, "On the origin of flicker noise in MOSFETs," Microelectron. Eng., vol.48, no.1-4, pp. 189-192, Sep. 1999.
19. N. B. Lukyanchikova, Noise and Fluctuations Controls in Electronic Devices, A. A. Balandin, Ed. Stevenson Ranch, CA: Amer. Sci. Publishers, 2002, ch. 10.