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Volumn 49, Issue 10, 2013, Pages 5204-5207

MgO-based double barrier magnetic tunnel junctions with synthetic antiferromagnetic free layer

Author keywords

Bias voltage at half maximum TMR ratio V1 2; DBMTJs; output voltage Vout; TMR ratio

Indexed keywords

ANNEALING TEMPERATURES; ANTIFERRO-MAGNETICALLY COUPLED; DBMTJS; DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS; OUTPUT VOLTAGES; SYNTHETIC ANTI-FERROMAGNETIC FREE LAYERS; TMR RATIO; TUNNELING MAGNETORESISTANCE;

EID: 84884801812     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2013.2263286     Document Type: Article
Times cited : (3)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.