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Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

1/f noise in MgO double-barrier magnetic tunnel junctions

(6) Yu, G Q a,b Diao, Z a Feng, J F a Kurt, H a Han, X F b Coey, J M D a

a TRINITY COLLEGE DUBLIN (Ireland)

b INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BIAS DEPENDENCE; DOUBLE-BARRIER MAGNETIC TUNNEL JUNCTIONS; FREQUENCY SPECTRA; LOW-FREQUENCY NOISE; MAGNETIC FIELD SENSORS; MGO BARRIER; NOISE MAGNITUDE; ROOM TEMPERATURE; TUNNELING MAGNETORESISTANCE;

ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SPECTROSCOPY;

TUNNEL JUNCTIONS;

EID: 79952921559 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3562951 Document Type: Article

Times cited : (29)

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