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Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

(8) Kim, D K a Cho, J U a Chun, B S b Shin, K H c Lee, K J a Tsunoda, M d Takahashi, M d Kim, Y K a

a Korea University (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c Korea Institute of Science and Technology (South Korea)

d TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE DEPENDENCE; BORON ATOM; FREE LAYERS; MAGNETIC TUNNEL JUNCTION; MAGNETO TRANSPORT PROPERTIES; MGO BARRIER; POST DEPOSITION ANNEALING; TUNNELING MAGNETORESISTANCE;

BORON; COBALT COMPOUNDS; TRANSPORT PROPERTIES;

MAGNETIC DEVICES;

EID: 84870934793 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4768931 Document Type: Article

Times cited : (7)

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