Scaling of gan hemts and schottky diodes for submillimeter-wave mmic applications

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 2982-2996

  Shinohara, Keisuke ^a   Regan, Dean C ^a   Tang, Yan ^a   Corrion, Andrea L ^a   Brown, David F ^a   Wong, Joel C ^a   Robinson, John F ^a   Fung, Helen H ^a   Schmitz, Adele ^a   Oh, Thomas C ^a   Kim, Samuel Jungjin ^a   Chen, Peter S ^a   Nagele, Robert G ^a   Margomenos, Alexandros D ^a   Micovic, Miroslav ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

E d mode dcfl ring oscillator; Gan hemt; Gan schottky diode; Low noise; Scaling; Self aligned gate

Indexed keywords

GAN HEMTS; LOW NOISE; RING OSCILLATOR; SCALING; SCHOTTKY DIODES; SELF-ALIGNED-GATE;

COUPLED CIRCUITS; CUTOFF FREQUENCY; ELECTRIC CONTACTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84884767264     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2268160     Document Type: Article

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