A 60 GHz power amplifier with 14.5 dbm saturation power and 25% peak PAE in CMOS 65 nm SOI

IEEE Journal of Solid-State Circuits

Volumn 45, Issue 7, 2010, Pages 1286-1294

  Siligaris, Alexandre ^a   Hamada, Yasuhiro ^b   Mounet, Christopher ^a   Raynaud, Christine ^a,c   Martineau, Baudouin ^c   Deparis, Nicolas ^d   Rolland, Nathalie ^d   Fukaishi, Muneo ^b   Vincent, Pierre ^a  

^a CEA GRENOBLE   (France)

^b NEC CORPORATION   (Japan)

^c STMICROELECTRONICS   (France)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

60 GHz; CMOS; CPW; power amplifier; SOI; V band

Indexed keywords

60 GHZ; CASCODE; LOW LOSS; PEAK POWER; SATURATION POWER; SOI SUBSTRATES; STANDARD CMOS; SUPPLY VOLTAGES; TRANSMISSION LINE; WIDEBAND POWER AMPLIFIER;

POWER AMPLIFIERS;

BROADBAND AMPLIFIERS;

EID: 77954159983     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2010.2049456     Document Type: Conference Paper

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