Rapid-thermal-annealing surface treatment for restoring the intrinsic properties of graphene field-effect transistors

Nanotechnology

Volumn 24, Issue 40, 2013, Pages

  Jang, Chan Wook ^a   Kim, Ju Hwan ^a   Kim, Jong Min ^a   Shin, Dong Hee ^a   Kim, Sung ^a   Choi, Suk Ho ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION PROCESS; GRAPHENE FIELD-EFFECT TRANSISTORS; HEIGHT PROFILES; INTRINSIC PROPERTY; LIFT-OFF PROCESS; LOW THERMAL BUDGET; SHEET RESISTANCE MEASUREMENTS; SURFACE RESIDUES;

ANNEALING; ATOMIC FORCE MICROSCOPY; FIELD EFFECT TRANSISTORS; NITROGEN; PHOTOLITHOGRAPHY; SURFACE ROUGHNESS; VAPORS;

GRAPHENE;

EID: 84884273846     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/40/405301     Document Type: Article

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