Graphene p-n vertical tunneling diodes

ACS Nano

Volumn 7, Issue 6, 2013, Pages 5168-5174

  Kim, Sung ^a   Shin, Dong Hee ^a   Kim, Chang Oh ^a   Kang, Soo Seok ^a   Kim, Jong Min ^a   Jang, Chan Wook ^a   Joo, Soong Sin ^a   Lee, Jae Sung ^a   Kim, Ju Hwan ^a   Choi, Suk Ho ^a   Hwang, Euyheon ^b  

^a Kyung Hee University   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

asymmetric; graphene; interlayer; p n diode; rectification; tunneling; vertical junction

Indexed keywords

ASYMMETRIC; INTERLAYER; P-N DIODE; RECTIFICATION; VERTICAL JUNCTIONS;

COMPOSITE FILMS; CORRUGATED METAL; ELECTRON TUNNELING; GRAPHENE; METAL INSULATOR BOUNDARIES; SEMICONDUCTING FILMS; TUNNEL DIODES;

SEMICONDUCTOR JUNCTIONS;

EID: 84879660428     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400899v     Document Type: Article

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