Mechanical control of electroresistive switching

Nano Letters

Volumn 13, Issue 9, 2013, Pages 4068-4074

  Kim, Yunseok ^a,b   Kelly, Simon J ^a,c   Morozovska, Anna ^d   Rahani, Ehsan Kabiri ^e   Strelcov, Evgheni ^a   Eliseev, Eugene ^f   Jesse, Stephen ^a   Biegalski, Michael D ^a   Balke, Nina ^a   Benedek, Nicole ^g   Strukov, Dmitri ^h   Aarts, J ^c   Hwang, Inrok ⁱ   Oh, Sungtaek ⁱ   Choi, Jin Sik ⁱ   Choi, Taekjib ^j   Park, Bae Ho ⁱ   Shenoy, Vivek B ^k   Maksymovych, Peter ^a   Kalinin, Sergei V ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b Sungkyunkwan University   (South Korea)

^c LEIDEN UNIVERSITY   (Netherlands)

^d INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^e Brown University   (United States)

^f FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^g UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^h University of California   (United States)

ⁱ Konkuk University   (South Korea)

^j Sejong University   (South Korea)

^k UNIVERSITY OF PENNSYLVANIA   (United States)

more..

Author keywords

AFM; mechanical force; metal insulator transition; Piezochemical effect; pressure

Indexed keywords

AFM; DATA STORAGE TECHNOLOGY; MATERIALS PHYSICS; MECHANICAL CONTROL; MECHANICAL FORCE; MECHANICAL STIMULUS; NON-VOLATILE MEMORY; PIEZOCHEMICAL EFFECT;

ELECTRIC FIELDS; LOGIC DEVICES; PRESSURE;

SEMICONDUCTOR INSULATOR BOUNDARIES;

METAL; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; INFORMATION RETRIEVAL; NANOTECHNOLOGY;

ELECTRIC CONDUCTIVITY; INFORMATION STORAGE AND RETRIEVAL; METALS; NANOSTRUCTURES; NANOTECHNOLOGY;

EID: 84884262763     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401411r     Document Type: Article

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