Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

Applied Physics A: Materials Science and Processing

Volumn 102, Issue 4, 2011, Pages 827-834

  Lee, Min Hwan ^a   Kim, Kyung Min ^a   Song, Seul Ji ^a   Rha, Sang Ho ^a   Seok, Jun Yeong ^a   Jung, Ji Sim ^a   Kim, Gun Hwan ^a   Yoon, Jung Ho ^a   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE; DC BIAS; OXYGEN IONS; OXYGEN MIGRATION; P-TYPE; P-TYPE NIO; PROBE-BASED; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; TIO; TRANSITION-METAL OXIDES;

CONDUCTIVE FILMS; OHMIC CONTACTS; OXYGEN; PROBES; REDOX REACTIONS; SCANNING PROBE MICROSCOPY; SURFACE REACTIONS; SWITCHING; SWITCHING SYSTEMS; TITANIUM DIOXIDE; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

OXIDE FILMS;

EID: 79959342891     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6266-7     Document Type: Article

References (19)

1. I. Hwang, J. Choi, S. Hong, J.-S. Kim, I.-S. Byun, J.H. Bahng, J.-Y. Koo, S.-O. Kang, B.H. Park, Appl. Phys. Lett. 96, 053112 (2010).
2. X. Wu, P. Zhou, J. Li, L.Y. Chen, H.B. Lv, Y.Y. Lin, T.A. Tang, Appl. Phys. Lett. 90, 183507 (2007).
3. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, X.-S. Li, G.-S. Park, B. Lee, S. Han, M. Kim, C.S. Hwang, Nat. Nanotechnol. 5, 148 (2010).
4. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, J. Appl. Phys. 98, 033715 (2005).
5. R. Waser, R. Dittmann, G. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009).
6. M.H. Lee, K.M. Kim, G.H. Kim, J.Y. Seok, S.J. Song, J.H. Yoon, C.S. Hwang, Appl. Phys. Lett. 96, 152909 (2010).
7. J.Y. Son, Y.-H. Shin, Appl. Phys. Lett. 92, 222106 (2008).
8. K.M. Kim, B.J. Choi, S.J. Song, G.H. Kim, C.S. Hwang, J. Electrochem. Soc. 156, G213 (2009).
9. A. Sawa, Mater. Today 11, 28 (2008).
10. H.B. Michaelson, J. Appl. Phys. 48, 4729 (1997).
11. S.J. O'Shea, R.M. Atta, M.E.Welland, Rev. Sci. Instrum. 66, 2508 (1995).
12. W.Y. Park, G.H. Kim, J.Y. Seok, K.M. Kim, S.J. Song, M.H. Lee, C.S. Hwang, Nanotechnology 21, 195201 (2010).
13. M.H. Lee, S.J. Song, K.M. Kim, G.H. Kim, J.Y. Seok, J.H. Yoon, C.S. Hwang, Appl. Phys. Lett. 97, 062909 (2010).
14. T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005).
15. A. Baikalov, Y.Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y.Y. Sun, Y.Y. Xue, C.W. Chu, Appl. Phys. Lett. 83, 957 (2003).
16. S. Tsui, A. Baikalov, J. Cmaidalka, Y.Y. Sun, Y.Q. Wang, Y.Y. Xue, C.W. Chu, L. Chen, A.J. Jacobson, Appl. Phys. Lett. 85, 317 (2004).
17. M. Nonnenmacher, M.P. O'Boyle, H.K. Wickramasinghe, Appl. Phys. Lett. 58, 2921 (1991).
18. L. Zhang, T. Sakai, N. Sakuma, T. Ono, K. Nakayama, Appl. Phys. Lett. 75, 3527 (1999).
19. M.H. Lee, C.S. Hwang, Nanoscale (2011). doi:10.1039/c0nr00580k.