Spatially inhomogeneous metal-insulator transition in doped manganites

Science

Volumn 285, Issue 5433, 1999, Pages 1540-1542

  Fath M ^a   Freisem, S ^a   Menovsky, A A ^a,b   Tomioka, Y ^c   Aarts, J ^a   Mydosh, J A ^a  

^a LEIDEN UNIVERSITY   (Netherlands)

^b UNIVERSITY OF AMSTERDAM   (Netherlands)

^c JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INSULATING MATERIALS; FERROMAGNETIC MATERIALS; LANTHANUM COMPOUNDS; MAGNETIC DOMAINS; MAGNETIC THIN FILMS; MAGNETORESISTANCE; PARAMAGNETISM; PERCOLATION (SOLID STATE); SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS;

COLOSSAL MAGNETORESISTANCE (CMR); LANTHANUM CALCIUM MANGANITE; METAL-INSULATOR TRANSITION;

MANGANESE COMPOUNDS;

FERROMAGNETIC MATERIAL; MANGANITE; METAL; UNCLASSIFIED DRUG;

ARTICLE; BINDING AFFINITY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MAGNETIC FIELD; PHASE SEPARATION; PHASE TRANSITION; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SPECTROSCOPY; TEMPERATURE;

EID: 0038620966     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.285.5433.1540     Document Type: Article

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