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Volumn 103, Issue 10, 2013, Pages

Low power consumption resistance random access memory with Pt/InO x/TiN structure

(8) Yang, Jyun Bao a Chang, Ting Chang a,b Huang, Jheng Jie a Chen, Yu Ting a Tseng, Hsueh Chih a Chu, Ann Kuo a Sze, Simon M a,c Tsai, Ming Jinn d

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SWITCHING; CROSS SECTIONAL AREA; CURRENT CONDUCTION MECHANISMS; ELECTRICAL CONDUCTANCE; LOW-POWER CONSUMPTION; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY;

SWITCHING; TITANIUM NITRIDE;

NONVOLATILE STORAGE;

EID: 84884229430 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4818672 Document Type: Article

Times cited : (8)

References (24)

1
- 0029516376
- S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, IEEE International Electron Devices Meeting 1995, p. 521.
- (1995) IEEE International Electron Devices Meeting , pp. 521
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Chan, W.⁵ Buchanan, D.⁶

2
- 84855250778
- 10.1016/S1369-7021(11)70302-9
- T. C. Chang, F. Y. Jian, S. C. Chen, and Y. T. Tsai, Mater. Today 14, 608 (2011). 10.1016/S1369-7021(11)70302-9
- (2011) Mater. Today , vol.14 , pp. 608
- Chang, T.C.¹ Jian, F.Y.² Chen, S.C.³ Tsai, Y.T.⁴

3
- 77954331414
- 10.1063/1.3457870
- J. Lu, T. C. Chang, Y. T. Chen, J. J. Huang, P. C. Yang, S. C. Chen, H. C. Huang, D. S. Gan, N. J. Ho, Y. Shi, and A. K. Chu, Appl. Phys. Lett. 96, 262107 (2010). 10.1063/1.3457870
- (2010) Appl. Phys. Lett. , vol.96 , pp. 262107
- Lu, J.¹ Chang, T.C.² Chen, Y.T.³ Huang, J.J.⁴ Yang, P.C.⁵ Chen, S.C.⁶ Huang, H.C.⁷ Gan, D.S.⁸ Ho, N.J.⁹ Shi, Y.¹⁰ Chu, A.K.¹¹

4
- 70350732732
- 10.1149/1.3240201
- K. M. Kim, B. J. Choi, S. J. Song, G. H. Kim, and C. S. Hwang, J. Electrochem. Soc. 156, G213 (2009). 10.1149/1.3240201
- (2009) J. Electrochem. Soc. , vol.156 , pp. 213
- Kim, K.M.¹ Choi, B.J.² Song, S.J.³ Kim, G.H.⁴ Hwang, C.S.⁵

5
- 84866906647
- 10.1109/LED.2012.2206365
- J. J. Huang, T. C. Chang, J. B. Yang, S. C. Chen, P. C. Yang, Y. T. Chen, H. C. Tseng, S. M. Sze, A. K. Chu, and M. J. Tsai, IEEE Electron Device Lett. 33, 1387 (2012). 10.1109/LED.2012.2206365
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 1387
- Huang, J.J.¹ Chang, T.C.² Yang, J.B.³ Chen, S.C.⁴ Yang, P.C.⁵ Chen, Y.T.⁶ Tseng, H.C.⁷ Sze, S.M.⁸ Chu, A.K.⁹ Tsai, M.J.¹⁰

6
- 79953048048
- 10.1109/LED.2011.2104936
- Y. E. Syu, T. C. Chang, T. M. Tsai, Y. C. Hung, K. C. Chang, M. J. Tsai, M. J. Kao, and S. M. Sze, IEEE Electron Device Lett. 32, 545 (2011). 10.1109/LED.2011.2104936
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 545
- Syu, Y.E.¹ Chang, T.C.² Tsai, T.M.³ Hung, Y.C.⁴ Chang, K.C.⁵ Tsai, M.J.⁶ Kao, M.J.⁷ Sze, S.M.⁸

7
- 38849155969
- 10.1063/1.2838350
- H. Shima, F. Takano, H. Muramatsu, H. Akinaga, I. H. Inoue, and H. Takagi, Appl. Phys. Lett. 92, 043510 (2008). 10.1063/1.2838350
- (2008) Appl. Phys. Lett. , vol.92 , pp. 043510
- Shima, H.¹ Takano, F.² Muramatsu, H.³ Akinaga, H.⁴ Inoue, I.H.⁵ Takagi, H.⁶

8
- 79956011470
- 10.1063/1.1473234
- L. P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80, 2997 (2002). 10.1063/1.1473234
- (2002) Appl. Phys. Lett. , vol.80 , pp. 2997
- Ma, L.P.¹ Liu, J.² Yang, Y.³

9
- 19744383252
- 10.1063/1.1845598
- T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005). 10.1063/1.1845598
- (2005) Appl. Phys. Lett. , vol.86 , pp. 012107
- Fujii, T.¹ Kawasaki, M.² Sawa, A.³ Akoh, H.⁴ Kawazoe, Y.⁵ Tokura, Y.⁶

10
- 84873604341
- 10.1063/1.4790277
- Y. T. Chen, T. C. Chang, J. J. Huang, H. C. Tseng, P. C. Yang, A. K. Chu, J. B. Yang, H. C. Huang, D. S. Gan, M. J. Tsai, and S. M. Sze, Appl. Phys. Lett. 102, 043508 (2013). 10.1063/1.4790277
- (2013) Appl. Phys. Lett. , vol.102 , pp. 043508
- Chen, Y.T.¹ Chang, T.C.² Huang, J.J.³ Tseng, H.C.⁴ Yang, P.C.⁵ Chu, A.K.⁶ Yang, J.B.⁷ Huang, H.C.⁸ Gan, D.S.⁹ Tsai, M.J.¹⁰ Sze, S.M.¹¹

11
- 76449090212
- 10.1063/1.3294632
- L. W. Feng, C. Y. Chang, Y. F. Chang, W. R. Chen, S. Y. Wang, P. W. Chiang, and T. C. Chang, Appl. Phys. Lett. 96, 052111 (2010). 10.1063/1.3294632
- (2010) Appl. Phys. Lett. , vol.96 , pp. 052111
- Feng, L.W.¹ Chang, C.Y.² Chang, Y.F.³ Chen, W.R.⁴ Wang, S.Y.⁵ Chiang, P.W.⁶ Chang, T.C.⁷

12
- 77953548242
- 10.1063/1.3428777
- L. W. Feng, C. Y. Chang, Y. F. Chang, T. C. Chang, S. Y. Wang, S. C. Chen, C. C. Lin, S. C. Chen, and P. W. Chiang, Appl. Phys. Lett. 96, 222108 (2010). 10.1063/1.3428777
- (2010) Appl. Phys. Lett. , vol.96 , pp. 222108
- Feng, L.W.¹ Chang, C.Y.² Chang, Y.F.³ Chang, T.C.⁴ Wang, S.Y.⁵ Chen, S.C.⁶ Lin, C.C.⁷ Chen, S.C.⁸ Chiang, P.W.⁹

13
- 43549126477
- 10.1016/S1369-7021(08)70119-6
- A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6
- (2008) Mater. Today , vol.11 , pp. 28
- Sawa, A.¹

14
- 42149174364
- 10.1063/1.2908928
- H. Y. Lee, P. S. Chen, T. Y. Wu, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, M. J. Tsai, and C. Lien, Appl. Phys. Lett. 92, 142911 (2008). 10.1063/1.2908928
- (2008) Appl. Phys. Lett. , vol.92 , pp. 142911
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Wang, C.C.⁴ Tzeng, P.J.⁵ Lin, C.H.⁶ Chen, F.⁷ Tsai, M.J.⁸ Lien, C.⁹

15
- 70450196874
- 10.1149/1.3257613
- G. Goncalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato, Electrochem. Solid-State Lett. 13, H20 (2010). 10.1149/1.3257613
- (2010) Electrochem. Solid-State Lett. , vol.13 , pp. 20
- Goncalves, G.¹ Barquinha, P.² Pereira, L.³ Franco, N.⁴ Alves, E.⁵ Martins, R.⁶ Fortunato, E.⁷

16
- 77956811460
- 10.1063/1.3481676
- T. C. Chen, T. C. Chang, C. T. Tsai, T. Y. Hsieh, S. C. Chen, C. S. Lin, M. C. Hung, C. H. Tu, J. J. Chang, and P. L. Chen, Appl. Phys. Lett. 97, 112104 (2010). 10.1063/1.3481676
- (2010) Appl. Phys. Lett. , vol.97 , pp. 112104
- Chen, T.C.¹ Chang, T.C.² Tsai, C.T.³ Hsieh, T.Y.⁴ Chen, S.C.⁵ Lin, C.S.⁶ Hung, M.C.⁷ Tu, C.H.⁸ Chang, J.J.⁹ Chen, P.L.¹⁰

17
- 77953765579
- 10.1063/1.3453870
- C. T. Tsai, T. C. Chang, S. C. Chen, I. Lo, S. W. Tsao, M. C. Hung, J. J. Chang, C. Y. Wu, and C. Y. Huang, Appl. Phys. Lett. 96, 242105 (2010). 10.1063/1.3453870
- (2010) Appl. Phys. Lett. , vol.96 , pp. 242105
- Tsai, C.T.¹ Chang, T.C.² Chen, S.C.³ Lo, I.⁴ Tsao, S.W.⁵ Hung, M.C.⁶ Chang, J.J.⁷ Wu, C.Y.⁸ Huang, C.Y.⁹

18
- 77954321120
- 10.1063/1.3456379
- M. C. Chen, T. C. Chang, C. T. Tsai, S. Y. Huang, S. C. Chen, C. W. Hu, S. M. Sze, and M. J. Tsai, Appl. Phys. Lett. 96, 262110 (2010). 10.1063/1.3456379
- (2010) Appl. Phys. Lett. , vol.96 , pp. 262110
- Chen, M.C.¹ Chang, T.C.² Tsai, C.T.³ Huang, S.Y.⁴ Chen, S.C.⁵ Hu, C.W.⁶ Sze, S.M.⁷ Tsai, M.J.⁸

19
- 79951958680
- 10.1109/LED.2010.2101044
- C. B. Lee, D. S. Lee, A. Benayad, S. R. Lee, M. Chang, M. J. Lee, J. Hur, Y. B. Kim, C. J. Kim, and U. I. Chung, IEEE Electron Device Lett. 32, 399 (2011). 10.1109/LED.2010.2101044
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 399
- Lee, C.B.¹ Lee, D.S.² Benayad, A.³ Lee, S.R.⁴ Chang, M.⁵ Lee, M.J.⁶ Hur, J.⁷ Kim, Y.B.⁸ Kim, C.J.⁹ Chung, U.I.¹⁰

20
- 84889862190
- 3rd ed. (Wiley-Interscience)
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley-Interscience, 2006).
- (2006) Physics of Semiconductor Devices
- Sze, S.M.¹ Ng, K.K.²

21
- 80053494334
- 10.1063/1.3645004
- H. C. Tseng, T. C. Chang, J. J. Huang, P. C. Yang, Y. T. Chen, F. Y. Jian, S. M. Sze, and M. J. Tsai, Appl. Phys. Lett. 99, 132104 (2011). 10.1063/1.3645004
- (2011) Appl. Phys. Lett. , vol.99 , pp. 132104
- Tseng, H.C.¹ Chang, T.C.² Huang, J.J.³ Yang, P.C.⁴ Chen, Y.T.⁵ Jian, F.Y.⁶ Sze, S.M.⁷ Tsai, M.J.⁸

22
- 84859376831
- 10.1186/1556-276X-7-194
- W. Banerjee, S. Maikap, C. S. Lai, Y. Y. Chen, T. C. Tien, H. Y. Lee, W. S. Chen, F. T. Chen, M. J. Kao, M. J. Tsai, and J. R. Yang, Nanoscale Research Lett. 7, 194 (2012). 10.1186/1556-276X-7-194
- (2012) Nanoscale Research Lett. , vol.7 , pp. 194
- Banerjee, W.¹ Maikap, S.² Lai, C.S.³ Chen, Y.Y.⁴ Tien, T.C.⁵ Lee, H.Y.⁶ Chen, W.S.⁷ Chen, F.T.⁸ Kao, M.J.⁹ Tsai, M.J.¹⁰ Yang, J.R.¹¹

23
- 34547513244
- 10.1149/1.2750450
- C. Y. Lin, C. Y. Wu, C. Y. Wu, C. Hu, and T. Y. Tseng, J. Electrochem. Soc. 154, G189 (2007). 10.1149/1.2750450
- (2007) J. Electrochem. Soc. , vol.154 , pp. 189
- Lin, C.Y.¹ Wu, C.Y.² Wu, C.Y.³ Hu, C.⁴ Tseng, T.Y.⁵

24
- 78249257612
- 10.1063/1.3501967
- X. Gao, Y. Xia, J. Ji, H. Xu, Y. Su, H. Li, C. Yang, H. Guo, J. Yin, and Z. Liu, Appl. Phys. Lett. 97, 193501 (2010). 10.1063/1.3501967
- (2010) Appl. Phys. Lett. , vol.97 , pp. 193501
- Gao, X.¹ Xia, Y.² Ji, J.³ Xu, H.⁴ Su, Y.⁵ Li, H.⁶ Yang, C.⁷ Guo, H.⁸ Yin, J.⁹ Liu, Z.¹⁰

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