Influence of oxygen concentration on resistance switching characteristics of gallium oxide

IEEE Electron Device Letters

Volumn 33, Issue 10, 2012, Pages 1387-1389

  Huang, Jheng Jie ^a   Chang, Ting Chang ^a,b   Yang, Jyun Bao ^a   Chen, Shih Ching ^a   Yang, Po Chun ^a   Chen, Yu Ting ^a   Tseng, Hsueh Chih ^a   Sze, Simon M ^a   Chu, Ann Kuo ^c   Tsai, Ming Jinn ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Gallium oxide; nonvolatile resistance switching memory; resistance random access memory (RRAM)

Indexed keywords

BISTABLE RESISTANCE; GALLIUM OXIDES; INFLUENCE OF OXYGEN; ON-RESISTANCE; OXYGEN GAS; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE RATIO; RESISTANCE SWITCHING; SET VOLTAGE;

RANDOM ACCESS STORAGE;

OXYGEN;

EID: 84866906647     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2206365     Document Type: Article

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