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Volumn 96, Issue 26, 2010, Pages

Enhanced retention characteristic of NiSi2 / SiNx compound nanocrystal memory

(11) Lu, Jin a,c Chang, Ting Chang a,b Chen, Yu Ting b Huang, Jheng Jie a Yang, Po Chun b Chen, Shih Ching a Huang, Hui Chun b Gan, Der Shin b Ho, New Jin b Shi, Yi c Chu, Ann Kuo b

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE STORAGE CHARACTERISTIC; HIGH DENSITY; NANOCRYSTAL MEMORIES; NITRIDE TRAPS; RETENTION CHARACTERISTICS; SMALL SIZE; TUNNEL BARRIER;

CAPACITANCE; CELLULOSE DERIVATIVES; NANOCRYSTALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR STORAGE; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77954331414 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3457870 Document Type: Article

Times cited : (18)

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