Improvement of resistance switching characteristics in a thin FeO x transition layer of TiN/ SiO2 / FeOx /FePt structure by rapid annealing

Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

  Feng, Li Wei ^a   Chang, Chun Yen ^a   Chang, Yao Feng ^a   Chang, Ting Chang ^b,c   Wang, Shin Yuan ^a   Chen, Shih Ching ^b   Lin, Chao Cheng ^a   Chen, Shih Cheng ^d   Chiang, Pei Wei ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILE; EMISSION SPECTRUMS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MEMORY SWITCHING; RAPID ANNEALING; RESISTANCE RATIO; RESISTANCE SWITCHING; RETENTION CHARACTERISTICS; TRANSITION LAYERS; X RAY PHOTONS;

EMISSION SPECTROSCOPY; IRON OXIDES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON COMPOUNDS; X RAY DIFFRACTION;

SWITCHING;

EID: 77953548242     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428777     Document Type: Article

References (17)

1. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. -S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. -I. Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2004, 587.
2. M. N. Kozicki, M. Park, and M. Mitkova, IEEE Trans. Nanotechnol. ZZZZZZ 1536-125X 4, 331 (2005). 10.1109/TNANO.2005.846936 (Pubitemid 40794460)
3. K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, Nature (London) NATUAS 0028-0836 433, 47 (2005). 10.1038/nature03190 (Pubitemid 40101138)
4. Y. Watanabe, J. G. Bednorz, A. Bietsch, C. Gerber, D. Widmer, A. Beck, and S. J. Wind, Appl. Phys. Lett. APPLAB 0003-6951 78, 3738 (2001). 10.1063/1.1377617
5. B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwanga, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. JAPIAU 0021-8979 98, 033715 (2005). 10.1063/1.2001146 (Pubitemid 41204789)
6. H. Sim, D. Choi, D. Lee, S. Seo, M. J. Lee, I. K. Yoo, and H. Wang, IEEE Electron Device Lett. EDLEDZ 0741-3106 26, 292 (2005). 10.1109/LED.2005.846592 (Pubitemid 40708833)
7. S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. APPLAB 0003-6951 76, 2749 (2000). 10.1063/1.126464
8. I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, Phys. Rev. B PRBMDO 0163-1829 77, 035105 (2008). 10.1103/PhysRevB.77.035105
9. D. S. Lee, H. J. Choi, H. J. Sim, D. H. Choi, H. S. Hwang, M. J. Lee, S. A. Seo, and I. K. Yoo, IEEE Electron Device Lett. EDLEDZ 0741-3106 26, 900 (2005). 10.1109/LED.2005.859625 (Pubitemid 41825089)
10. C. -Y. Lin, C. -Y. Wu, C. -Y. Wu, C. Hu, and T. -Y. Tseng, J. Electrochem. Soc. JESOAN 0013-4651 154, G189 (2007). 10.1149/1.2750450 (Pubitemid 47186550)
11. H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2008, 297.
12. L. W. Feng, C. Y. Chang, Y. F. Chang, W. R. Chen, S. Y. Wang, P. W. Chiang, and T. C. Chang, Appl. Phys. Lett. APPLAB 0003-6951 96, 052111 (2010). 10.1063/1.3294632
13. S. B. Lee, S. C. Chae, S. H. Chang, C. Liu, C. U. Jung, S. Seo, and D. -W. Kim, J. Korean Phys. Soc. KPSJAS 0374-4884 51, S96 (2007). 10.3938/jkps.51.96
14. Y. Ikeda, M. Takana, and Y. Bando, Bull. Inst. Chem. Res., Kyoto Univ. BICRAS 0023-6071 64, 249 (1986).
15. S. Muraoka, K. Osano, Y. Kanzawa, S. Mitani, S. Fujii, K. Katayama, Y. Katoh, Z. Wei, T. Mikawa, K. Arita, Y. Kawashima, R. Azuma, K. Kawai, K. Shimakawa, A. Odagawa, and T. Takagi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 227.
16. H. Yanagihara, M. Hasegawa, E. Kita, Y. Wakabayashi, H. Sawa, and K. Siratori, J. Phys. Soc. Jpn. JUPSAU 0031-9015 75, 054708 (2006). 10.1143/JPSJ.75.054708 (Pubitemid 43736019)
17. S. Kumari, C. Tripathi, A. P. Singh, D. Chauhan, R. Shrivastav, S. Dass, and V. R. Satsangi, Curr. Sci. CUSCAM 0011-3891 91, 1062 (2006).