Ge nanowire transistors with high-quality interfaces by atomic-scale thermal annealing

Proceedings of the IEEE Conference on Nanotechnology

Volumn , Issue , 2012, Pages

  Tang, Jianshi ^a   Wang, Chiu Yen ^b   Chen, Lih Juann ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Ge Nanowire Heterostructures; Manganese Germanide; Nanowire Transistors; Nickel Germanide

Indexed keywords

ATOMIC SCALE; EPITAXIAL INTERFACES; GERMANIDES; HIGH QUALITY; HIGH-QUALITY INTERFACE; I-V MEASUREMENTS; NANOWIRE HETEROSTRUCTURES; NANOWIRE SURFACE; NANOWIRE TRANSISTORS; NI CONTACTS; NICKEL GERMANIDE; OXIDE CONFINEMENT; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY SOURCE/DRAIN; SINGLE-CRYSTALLINE; SPIN INJECTION; SPINTRONICS APPLICATION; TEMPERATURE DEPENDENT; THERMAL-ANNEALING;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; GERMANIUM; GERMANIUM COMPOUNDS; MANGANESE; NANOWIRES; NICKEL; RAPID THERMAL ANNEALING; SOLID STATE REACTIONS; TRANSISTORS;

NANOTECHNOLOGY;

EID: 84869191652     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2012.6321976     Document Type: Conference Paper

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