High frequency characterization of a Schottky contact to a GaN nanowire bundle

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Chiang, Chin Jen ^a   Wallis, T Mitch ^a   Gu, Dazhen ^a   Imtiaz, Atif ^a   Kabos, Pavel ^a   Blanchard, Paul T ^a   Bertness, Kristine A ^a   Sanford, Norman A ^a   Kim, Kichul ^b   Filipovic, Dejan ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BROADBAND RESPONSE; BROADBAND SIGNAL; C-V CURVE; CAPACITANCE VOLTAGE; GAN NANOWIRES; HIGH-FREQUENCY CHARACTERIZATION; JUNCTION CAPACITANCES; ON WAFER MICROWAVE MEASUREMENTS; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

CAPACITANCE; CARRIER CONCENTRATION; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVE CIRCUITS; MICROWAVE DEVICES; MICROWAVE MEASUREMENT; NANOWIRES; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

ELECTRIC CONTACTORS;

EID: 77954196867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428391     Document Type: Article

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