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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1750-1752

Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films

(7) Arehart, A R a Corrion, A b Poblenz, C b Speck, J S b Mishra, U K b DenBaars, S P b Ringel, S A a

a The Ohio State University (United States)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA NITROGEN; AMMONIA SOURCE; DEEP LEVEL; DEEP LEVEL OPTICAL SPECTROSCOPY; DEEP TRAPS; DEFECT INCORPORATION; DLTS; ENERGY LEVEL; FLUX RATIO; GAN FILM; GROWTH FLUX; GROWTH OF GAN; MBE GROWTH; POTENTIAL DEFECTS; RF PLASMA; TRAP CONCENTRATION; V/III RATIO;

AMMONIA; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN PLASMA; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR GROWTH;

EID: 52349095241 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200778622 Document Type: Conference Paper

Times cited : (56)

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