High-transconductance graphene solution-gated field effect transistors

Applied Physics Letters

Volumn 99, Issue 3, 2011, Pages

  Hess, L H ^a   Hauf, M V ^a   Seifert, M ^a   Speck, F ^b   Seyller, T ^b   Stutzmann, M ^a   Sharp, I D ^a   Garrido, J A ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; HIGH MOBILITY; SENSING APPLICATIONS;

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; GRAPHENE; SILICON CARBIDE; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 79960795965     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3614445     Document Type: Article

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