Roles of doping, temperature, and electric field on spin transport through semiconducting channels in spin valves

IEEE Transactions on Nanotechnology

Volumn 12, Issue 5, 2013, Pages 796-805

  Rakheja, Shaloo ^a   Naeemi, Azad ^b  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Doping; gallium arsenide; phonons; silicon; spin relaxation; spin valves

Indexed keywords

DOPING CONCENTRATION; DRIFTDIFFUSION EQUATIONS; NONLOCAL SPIN VALVES; OPERATING TEMPERATURE; SPIN RELAXATION; SPIN VALVE; THEORETICAL STUDY; TRANSPORT EFFICIENCY;

DOPING (ADDITIVES); ELECTRIC FIELDS; GALLIUM ARSENIDE; MAGNETIC DEVICES; MAGNETORESISTANCE; PHONONS; SEMICONDUCTING GALLIUM; SILICON;

SEMICONDUCTOR DOPING;

EID: 84883774725     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2274494     Document Type: Article

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