Electrical spin injection into semiconductors

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 4, 2001, Pages

  Smith, D L ^a   Silver, R N ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CONDUCTANCE; ELECTRICITY; MAGNETIC FIELD; MATHEMATICAL MODEL; SEMICONDUCTOR;

EID: 0035878492     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.045323     Document Type: Article

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23. A specific device configuration must be specified to address the effects of possible interface charging on spin injection. Charging effects cannot influence the low current density spin injection results.
24. The current density dependence of (formula presented) and (formula presented) cannot influence the low current density spin injection results. Since the electron density in the contact is much larger than that in the semiconductor, the spin polarization of the semiconductor is the dominant contribution to changes in spin injection at a high current density.