Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 234, Issue 5, 1997, Pages 379-383

  Bungay, A R ^a   Popov, S V ^a   Shatwell, I R ^a   Zheludev, N I ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Faraday effect; Spin relaxation

Indexed keywords

FARADAY EFFECT; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MAGNETIC MOMENTS; RELAXATION TIME; SEMICONDUCTOR QUANTUM WELLS; SPIN DYNAMICS;

CARRIER SPINS; DIRECT MEASUREMENT; ELECTRON-SPIN RELAXATION; SPECTROSCOPIC TECHNIQUE; SPECULAR INVERSE FARADAY EFFECTS; SPIN RELAXATION; TIME DOMAIN;

ELECTROSPINNING;

EID: 0004431274     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(97)00527-6     Document Type: Article

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