Conductivity mismatch and voltage dependence of magnetoresistance in a semiconductor spin injection device

Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

  Roy, Arunanshu M ^a   Nikonov, Dmitri E ^b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTION DEVICE; DOPING DENSITIES; FERROMAGNETS; MAGNETIC TUNNEL JUNCTION; MATERIAL PARAMETER; OPTIMAL MATERIALS; SEMICONDUCTOR INTERFACES; SPIN INJECTION; SPIN INJECTION DEVICES; SPIN POLARIZED CURRENTS; SPIN-POLARIZED CARRIERS; TUNNELING BARRIER HEIGHTS; TUNNELING PROBABILITIES; VOLTAGE DEPENDENCE;

ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; MAGNETS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPIN POLARIZATION; SUPERCONDUCTING MATERIALS; TEXTILE MILLS; TUNNEL JUNCTIONS; TUNNELING (EXCAVATION); WIND TUNNELS;

SPIN DYNAMICS;

EID: 77950591699     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3319570     Document Type: Conference Paper

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