Electron-hole bilayer tunnel FET for steep subthreshold swing and improved on current

European Solid-State Device Research Conference

Volumn , Issue , 2011, Pages 259-262

  Lattanzio, Livio ^a   De Michielis, Luca ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

2-D NUMERICAL SIMULATION; BACK-GATE BIAS; BAND TO BAND TUNNELING; CARRIER TUNNELING; DRIVE CURRENTS; ELECTRON-HOLE BILAYERS; FIGURES OF MERITS; GATE LENGTH; ON CURRENTS; P-I-N JUNCTIONS; SILICON CHANNEL; SILICON THICKNESS; SUBTHRESHOLD SLOPE; SUBTHRESHOLD SWING; TRANSFER CHARACTERISTICS; TUNNEL FET;

MESFET DEVICES;

EID: 82955201869     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2011.6044185     Document Type: Conference Paper

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