Band bending and determination of band offsets in amorphous/crystalline silicon heterostructures from planar conductance measurements

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Varache, R ^a,b   Kleider, J P ^a   Favre, W ^a   Korte, L ^b  

^a UNIV PARIS SUD   (France)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; ENERGY GAP; HETEROJUNCTIONS; INTERFACE STATES; SILICON; TEMPERATURE DISTRIBUTION;

BRANCH-POINT ENERGIES; CONDUCTANCE MEASUREMENT; CONDUCTION BAND OFFSET; RESEARCH INSTITUTES; SHEET CARRIER DENSITIES; STRUCTURE PROPERTY; TEMPERATURE DEPENDENCE; VALENCE BAND OFFSETS;

AMORPHOUS SILICON;

EID: 84883297771     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769736     Document Type: Article

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